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ChinaPMDPB70EN,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMDPB70EN,115
BESCHREIBUNG
MOSFET 2N-CH 30V 3.5A 6HUSON
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 3.5A 510mW Surface Mount 6-HUSON (2x2)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,480
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.5A
Rds On (Max) @ Id, Vgs
57mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
130pF @ 15V
Power - Max
510mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PMDPB70
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NEXNXPPMDPB70EN,115
2156-PMDPB70EN115-NXTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/NXP USA Inc. PMDPB70EN,115
Dokumente und Medien
Datasheets
1(PMDPB70EN,115)
Menge Preis
QUANTITÄT: 1480
Einzelpreis: $0.2
Verpackung: Bulk
MinMultiplikator: 1480
Verpackung: Bulk
MinMultiplikator: 1480
Stellvertreter
-