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ChinaAPT11GP60BDQBG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT11GP60BDQBG
BESCHREIBUNG
IGBT 600V 41A 187W TO247
DETAILIERTE BESCHREIBUNG
IGBT PT 600 V 41 A 187 W Through Hole TO-247-3
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
POWER MOS 7®
Package
Tube
Product Status
Obsolete
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
41 A
Current - Collector Pulsed (Icm)
45 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 11A
Power - Max
187 W
Switching Energy
46µJ (on), 90µJ (off)
Input Type
Standard
Gate Charge
40 nC
Td (on/off) @ 25°C
7ns/29ns
Test Condition
400V, 11A, 5Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Product Number
APT11G
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT11GP60BDQBG-ND
150-APT11GP60BDQBG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT11GP60BDQBG
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