Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SQS401EN-T1_GE3
BESCHREIBUNG
MOSFET P-CH 40V 16A PPAK1212-8
DETAILIERTE BESCHREIBUNG
P-Channel 40 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SQS401EN-T1_GE3 Models
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21.2 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1875 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SQS401

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SQS401EN-T1_GE3DKR
SQS401EN-T1_GE3TR
SQS401EN-T1-GE3-ND
SQS401EN-T1_GE3CT
SQS401EN-T1-GE3

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQS401EN-T1_GE3

Dokumente und Medien

Datasheets
1(SQS401EN)
PCN Obsolescence/ EOL
1(SQS401EN 20/May/2021)
PCN Assembly/Origin
1(SIL-040-2014-Rev-3 22/Sep/2014)
PCN Part Number
1(New Ordering Code 19/Mar/2015)
EDA Models
1(SQS401EN-T1_GE3 Models)

Menge Preis

-

Stellvertreter

Teil Nr. : SQS401EN-T1_BE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 108,382
Einzelpreis. : $0.90000
Ersatztyp. : Direct
Teil Nr. : SQS411ENW-T1_GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,990
Einzelpreis. : $0.91000
Ersatztyp. : Direct