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China2N6764T1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N6764T1
BESCHREIBUNG
MOSFET N-CH 100V 38A TO3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 38A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
4W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AE
Base Product Number
2N6764
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-2N6764T1
2N6764T1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation 2N6764T1
Dokumente und Medien
Datasheets
1(2N6764,66,68,70)
Environmental Information
()
HTML Datasheet
1(2N6764,66,68,70)
Menge Preis
-
Stellvertreter
-