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ChinaSIHG73N60AEL-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHG73N60AEL-GE3
BESCHREIBUNG
MOSFET N-CH 600V 69A TO247AC
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 69A (Tc) 520W (Tc) Through Hole TO-247AC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
EL
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42mOhm @ 36.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
342 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6709 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG73
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIHG73N60AEL-GE3DKR
SIHG73N60AEL-GE3DKRINACTIVE
SIHG73N60AEL-GE3CT
SIHG73N60AEL-GE3TR
SIHG73N60AEL-GE3DKR-ND
SIHG73N60AEL-GE3TRINACTIVE
SIHG73N60AEL-GE3CT-ND
SIHG73N60AEL-GE3TR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHG73N60AEL-GE3
Dokumente und Medien
Datasheets
1(SIHG73N60AEL ~)
HTML Datasheet
1(SIHG73N60AEL ~)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $10.725
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $12.17
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-