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ChinaPDTC124EMB,315
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTC124EMB,315
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A 3DFN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount DFN1006B-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
11,181
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA
Frequency - Transition
230 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTC124
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNEXPDTC124EMB,315
2156-PDTC124EMB,315
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTC124EMB,315
Dokumente und Medien
Datasheets
1(PDTC124EMB Datasheet)
Menge Preis
QUANTITÄT: 11181
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11181
Verpackung: Bulk
MinMultiplikator: 11181
Stellvertreter
-