English
Spain
Rusia
Italy
ChinaFGY75T95LQDT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGY75T95LQDT
BESCHREIBUNG
IGBT 950V 75A
DETAILIERTE BESCHREIBUNG
IGBT Trench Field Stop 950 V 150 A 453 W Through Hole TO-247-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
950 V
Current - Collector (Ic) (Max)
150 A
Current - Collector Pulsed (Icm)
225 A
Vce(on) (Max) @ Vge, Ic
1.69V @ 15V, 75A
Power - Max
453 W
Switching Energy
2mJ (on), 1.8mJ (off)
Input Type
Standard
Gate Charge
663.3 nC
Td (on/off) @ 25°C
52ns/496ns
Test Condition
600V, 37.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr)
259 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Product Number
FGY75
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi FGY75T95LQDT
Dokumente und Medien
Datasheets
1(FGY75T95LQDT)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
PCN Design/Specification
1(Dimension/Color Change 24/Feb/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab Chgs 30/Apr/2020)
PCN Packaging
1(Packing quantity increase 28/Dec/2020)
HTML Datasheet
1(FGY75T95LQDT)
Menge Preis
-
Stellvertreter
-