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ChinaFCU850N80Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCU850N80Z
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 6A (Tc) 75W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
256
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSONSFCU850N80Z
2156-FCU850N80Z
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCU850N80Z
Dokumente und Medien
Datasheets
1(FCU850N80Z Datasheet)
Menge Preis
QUANTITÄT: 256
Einzelpreis: $1.18
Verpackung: Bulk
MinMultiplikator: 256
Verpackung: Bulk
MinMultiplikator: 256
Stellvertreter
-