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TEILNUMMER DES HERSTELLERS
MT29RZ4B2DZZHGSK-18 W.80E TR
BESCHREIBUNG
IC FLASH RAM 4GBIT PAR 162VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gbit (NAND), 2Gbit (LPDDR2) Parallel 533 MHz 162-VFBGA (11.5x13)
HERSTELLER
Micron Technology Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Micron Technology Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile, Volatile
Memory Format
FLASH, RAM
Technology
FLASH - NAND, DRAM - LPDDR2
Memory Size
4Gbit (NAND), 2Gbit (LPDDR2)
Memory Organization
512M x 8 (NAND), 64M x 32 (LPDDR2)
Memory Interface
Parallel
Clock Frequency
533 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.8V
Operating Temperature
-25°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
162-VFBGA
Supplier Device Package
162-VFBGA (11.5x13)
Base Product Number
MT29RZ4B2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
MT29RZ4B2DZZHGSK-18 W.80E TR-ND
MT29RZ4B2DZZHGSK-18W.80ETR
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. MT29RZ4B2DZZHGSK-18 W.80E TR
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Menge Preis
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Stellvertreter
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