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ChinaRN1112(T5L,F,T)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN1112(T5L,F,T)
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A SSM
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Base Product Number
RN1112
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
RN1112(T5LFT)CT
RN1112(T5LFT)DKR
RN1112(T5LFT)TR
RN1112T5LFT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1112(T5L,F,T)
Dokumente und Medien
Datasheets
1(RN1112,1113)
Menge Preis
-
Stellvertreter
-