Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
3 N and 3 P-Channel (3-Phase Bridge)
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 10V
Operating Temperature
175°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package
20-HSOP
Base Product Number
RJM0603