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ChinaMSCSM120AM08CT3AG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MSCSM120AM08CT3AG
BESCHREIBUNG
SIC 2N-CH 1200V 337A SP3F
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 337A (Tc) 1.409kW (Tc) Chassis Mount SP3F
HERSTELLER
Microchip Technology
STANDARD LEADTIME
37 Weeks
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
337A (Tc)
Rds On (Max) @ Id, Vgs
7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id
2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
12.08pF @ 1000V
Power - Max
1.409kW (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP3F
Base Product Number
MSCSM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCSM120AM08CT3AG
Dokumente und Medien
Datasheets
1(MSCSM120AM08CT3G)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $500.59
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-