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ChinaFPF2G120BF07AS
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FPF2G120BF07AS
BESCHREIBUNG
IGBT MODULE 650V 40A 156W F2
DETAILIERTE BESCHREIBUNG
IGBT Module Field Stop 3 Independent 650 V 40 A 156 W Through Hole F2
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
70
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tray
Product Status
Obsolete
IGBT Type
Field Stop
Configuration
3 Independent
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
40 A
Power - Max
156 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector Cutoff (Max)
250 µA
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
F2
Base Product Number
FPF2G120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/onsemi FPF2G120BF07AS
Dokumente und Medien
Other Related Documents
1(SiC MOSFETs: Gate Drive Optimization)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Jan/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(FPF2GYYY 06/Feb/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Menge Preis
-
Stellvertreter
Teil Nr. : FPF2G120BF07AS
Hersteller. : onsemi
Verfügbare Menge. : 64
Einzelpreis. : $106.45000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 64
Einzelpreis. : $106.45000
Ersatztyp. : Parametric Equivalent