Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
PMZB790SN,315
BESCHREIBUNG
MOSFET N-CH 60V 650MA DFN1006B-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 650mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,959

Technische Daten

Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
650mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
940mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
35 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006B-3
Package / Case
SC-101, SOT-883

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

NEXNXPPMZB790SN,315
2156-PMZB790SN,315-ND
2156-PMZB790SN315-NXTR-ND
2156-PMZB790SN315

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMZB790SN,315

Dokumente und Medien

Datasheets
1(PMZB790SN,315)

Menge Preis

QUANTITÄT: 2959
Einzelpreis: $0.1
Verpackung: Bulk
MinMultiplikator: 2959

Stellvertreter

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