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ChinaA2T18S262W12NR3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
A2T18S262W12NR3
BESCHREIBUNG
RF MOSFET LDMOS 28V OM880X-2L2L
DETAILIERTE BESCHREIBUNG
RF Mosfet 28 V 1.6 A 1.805GHz ~ 1.88GHz 19.3dB 231W OM-880X-2L2L
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
250
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
LDMOS
Frequency
1.805GHz ~ 1.88GHz
Gain
19.3dB
Voltage - Test
28 V
Current Rating (Amps)
10µA
Noise Figure
-
Current - Test
1.6 A
Power - Output
231W
Voltage - Rated
65 V
Mounting Type
Chassis Mount
Package / Case
OM-880X-2L2L
Supplier Device Package
OM-880X-2L2L
Base Product Number
A2T18
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2832-A2T18S262W12NR3
935346497528
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/NXP USA Inc. A2T18S262W12NR3
Dokumente und Medien
Datasheets
1(A2T18S262W12NR3)
Video File
1(5G Wireless Infrastructure for a Connected World)
Environmental Information
()
PCN Packaging
()
HTML Datasheet
1(A2T18S262W12NR3)
Menge Preis
-
Stellvertreter
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