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ChinaBUK7E13-60E,127
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TEILNUMMER DES HERSTELLERS
BUK7E13-60E,127
BESCHREIBUNG
MOSFET N-CH 60V 58A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 58A (Ta) 96W (Ta) Through Hole I2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
833
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
58A (Ta)
Rds On (Max) @ Id, Vgs
13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
96W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
NEXNXPBUK7E13-60E,127
2156-BUK7E13-60E127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK7E13-60E,127
Dokumente und Medien
Datasheets
1(BUK7E13-60E,127)
Menge Preis
QUANTITÄT: 833
Einzelpreis: $0.36
Verpackung: Tube
MinMultiplikator: 833
Verpackung: Tube
MinMultiplikator: 833
Stellvertreter
-