English
Spain
Rusia
Italy
China2N5306
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N5306
BESCHREIBUNG
TRANS NPN DARL 25V 1.2A TO92-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 25 V 1.2 A 625 mW Through Hole TO-92-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2N5306 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
1.2 A
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
7000 @ 2mA, 5V
Power - Max
625 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
2N5306
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2N5306
Dokumente und Medien
Datasheets
1(2N5306)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(2N5306)
EDA Models
1(2N5306 Models)
Menge Preis
-
Stellvertreter
-