English
Spain
Rusia
Italy
ChinaIRFPS3810PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFPS3810PBF
BESCHREIBUNG
MOSFET N-CH 100V 170A SUPER247
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 170A (Tc) 580W (Tc) Through Hole SUPER-247™ (TO-274AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
390 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
580W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SUPER-247™ (TO-274AA)
Package / Case
TO-274AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRFPS3810PBF
SP001566934
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFPS3810PBF
Dokumente und Medien
Datasheets
1(IRFPS3810PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFPS3810 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFPS3810PbF)
Simulation Models
1(IRFPS3810 Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFP4468PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 387
Einzelpreis. : $1,332.00000
Ersatztyp. : Similar
Verfügbare Menge. : 387
Einzelpreis. : $1,332.00000
Ersatztyp. : Similar