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ChinaRF1S4N100SM9A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S4N100SM9A
BESCHREIBUNG
MOSFET N-CH 1000V 4.3A TO263AB
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 4.3A (Tc) 150W (Tc) Surface Mount TO-263AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
89
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Rds On (Max) @ Id, Vgs
3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-RF1S4N100SM9A
HARHARRF1S4N100SM9A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S4N100SM9A
Dokumente und Medien
Datasheets
1(RFD3055LESM9A)
Menge Preis
QUANTITÄT: 89
Einzelpreis: $3.39
Verpackung: Bulk
MinMultiplikator: 89
Verpackung: Bulk
MinMultiplikator: 89
Stellvertreter
-