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ChinaBC847QAPN147
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TEILNUMMER DES HERSTELLERS
BC847QAPN147
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
9,812
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Vce Saturation (Max) @ Ib, Ic
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Supplier Device Package
DFN1010B-6
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNEXBC847QAPN147
2156-BC847QAPN147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. BC847QAPN147
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HTML Datasheet
1(BC847QAPN)
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