Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
12400 pF @ 10 V
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220NIS
Package / Case
TO-220-3 Full Pack
Base Product Number
2SK3844