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ChinaFQA27N25
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA27N25
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 2
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 27A (Tc) 210W (Tc) Through Hole TO-3PN
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
237
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FQA27N25
ONSONSFQA27N25
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA27N25
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 237
Einzelpreis: $1.59
Verpackung: Bulk
MinMultiplikator: 237
Verpackung: Bulk
MinMultiplikator: 237
Stellvertreter
-