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ChinaPHE13003C,126
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHE13003C,126
BESCHREIBUNG
NOW WEEN - PHE13003C - POWER BIP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,963
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A, 2V
Power - Max
2.1 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
WENNXPPHE13003C,126
2156-PHE13003C,126
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PHE13003C,126
Dokumente und Medien
Datasheets
1(PHE13003C,412 Datasheet)
Menge Preis
QUANTITÄT: 3963
Einzelpreis: $0.08
Verpackung: Bulk
MinMultiplikator: 3963
Verpackung: Bulk
MinMultiplikator: 3963
Stellvertreter
-