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ChinaIRF8306MTRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF8306MTRPBF
BESCHREIBUNG
MOSFET N-CH 30V 23A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4110 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.1W (Ta), 75W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Base Product Number
IRF8306
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIRF8306MTRPBF
SP001572242
2156-IRF8306MTRPBF
2156-IRF8306MTRPBF-ITTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF8306MTRPBF
Dokumente und Medien
Datasheets
1(IRF8306M(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
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Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF8306M(TR)PbF)
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