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ChinaIRFI1010NPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFI1010NPBF
BESCHREIBUNG
MOSFET N-CH 55V 49A TO220AB FP
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 49A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRFI1010NPBF Models
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRFI1010NPBF
IFEINFIRFI1010NPBF
2156-IRFI1010NPBF
SP001570872
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFI1010NPBF
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