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ChinaNESG220034-T1-A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NESG220034-T1-A
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 5.5V 200mA 11.5GHz 886mW Surface Mount PW-MINI (SOT-89)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
773
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5.5V
Frequency - Transition
11.5GHz
Noise Figure (dB Typ @ f)
0.9dB @ 1GHz
Gain
12dB
Power - Max
886mW
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 10mA, 5V
Current - Collector (Ic) (Max)
200mA
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PW-MINI (SOT-89)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-NESG220034-T1-A
RENRNSNESG220034-T1-A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation NESG220034-T1-A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 773
Einzelpreis: $0.39
Verpackung: Bulk
MinMultiplikator: 773
Verpackung: Bulk
MinMultiplikator: 773
Stellvertreter
-