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ChinaBSS670S2LL6327HTSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS670S2LL6327HTSA1
BESCHREIBUNG
MOSFET N-CH 55V 540MA SOT23-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 540mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id
2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs
2.26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23
Package / Case
TO-236-3, SC-59, SOT-23-3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
BSS670S2L L6327-ND
BSS670S2L L6327
BSS670S2LL6327HTSA1TR
SP000247301
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS670S2LL6327HTSA1
Dokumente und Medien
Datasheets
1(BSS670S2L)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSS670S2L)
Menge Preis
-
Stellvertreter
Teil Nr. : BSS670S2LH6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 63,697
Einzelpreis. : $0.44000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 63,697
Einzelpreis. : $0.44000
Ersatztyp. : Parametric Equivalent