Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HUF76009D3ST
BESCHREIBUNG
MOSFET N-CH 20V 20A TO252AA
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 20A (Tc) 41W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,110

Technische Daten

Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
27mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FAIFSCHUF76009D3ST
2156-HUF76009D3ST-FSTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF76009D3ST

Dokumente und Medien

Datasheets
1(HUF76009D3ST)

Menge Preis

QUANTITÄT: 1110
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1110

Stellvertreter

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