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ChinaIRL520L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL520L
BESCHREIBUNG
MOSFET N-CH 100V 9.2A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-262-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
270mOhm @ 5.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRL520
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRL520L
Dokumente und Medien
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Menge Preis
-
Stellvertreter
Teil Nr. : IRL520LPBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.63750
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 0
Einzelpreis. : $0.63750
Ersatztyp. : Parametric Equivalent