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ChinaSI7495DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7495DP-T1-GE3
BESCHREIBUNG
MOSFET P-CH 12V 13A PPAK SO-8
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 13A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7495
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7495DP-T1-GE3
Dokumente und Medien
Datasheets
1(SI7495DP)
HTML Datasheet
1(SI7495DP)
Menge Preis
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Stellvertreter
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