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ChinaAPTMC120AM09CT3AG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTMC120AM09CT3AG
BESCHREIBUNG
SIC 2N-CH 1200V 295A SP3
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 295A (Tc) 1250W Chassis Mount SP3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
295A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 200A, 20V
Vgs(th) (Max) @ Id
2.4V @ 40mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
644nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
11000pF @ 1000V
Power - Max
1250W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTMC120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120AM09CT3AG
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