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ChinaAPT13GP120KG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT13GP120KG
BESCHREIBUNG
IGBT 1200V 41A 250W TO220
DETAILIERTE BESCHREIBUNG
IGBT PT 1200 V 41 A 250 W Through Hole TO-220 [K]
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
POWER MOS 7®
Package
Tube
Product Status
Obsolete
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
41 A
Current - Collector Pulsed (Icm)
50 A
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 13A
Power - Max
250 W
Switching Energy
114µJ (on), 165µJ (off)
Input Type
Standard
Gate Charge
55 nC
Td (on/off) @ 25°C
9ns/28ns
Test Condition
600V, 13A, 5Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220 [K]
Base Product Number
APT13GP120
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-APT13GP120KG
APT13GP120KG-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT13GP120KG
Dokumente und Medien
Datasheets
1(APT13GP120K)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
HTML Datasheet
1(APT13GP120K)
Menge Preis
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Stellvertreter
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