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TEILNUMMER DES HERSTELLERS
MPQ6600A1
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array NPN, PNP Complementary 45V 50mA 50MHz 500mW Through Hole 14-PDIP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
247
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP Complementary
Current - Collector (Ic) (Max)
50mA
Voltage - Collector Emitter Breakdown (Max)
45V
Vce Saturation (Max) @ Ib, Ic
250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1mA, 5V
Power - Max
500mW
Frequency - Transition
50MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Supplier Device Package
14-PDIP
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-MPQ6600A1
ONSONSMPQ6600A1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/onsemi MPQ6600A1
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 247
Einzelpreis: $1.22
Verpackung: Bulk
MinMultiplikator: 247
Verpackung: Bulk
MinMultiplikator: 247
Stellvertreter
-