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ChinaFX6KMJ-3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FX6KMJ-3
BESCHREIBUNG
6A, 150V, 0.5
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 6A (Tc) 25W (Tc) Through Hole TO-220FN
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
217
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
530mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2420 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FN
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-FX6KMJ-3
RENRNSFX6KMJ-3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation FX6KMJ-3
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 217
Einzelpreis: $1.38
Verpackung: Bulk
MinMultiplikator: 217
Verpackung: Bulk
MinMultiplikator: 217
Stellvertreter
-