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TEILNUMMER DES HERSTELLERS
64-0055PBF
BESCHREIBUNG
MOSFET N-CH 60V 160A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 160A (Tc) 230W (Tc) Through Hole
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies 64-0055PBF
Dokumente und Medien
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Menge Preis
-
Stellvertreter
Teil Nr. : IRFB3306PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 3,691
Einzelpreis. : $1.99000
Ersatztyp. : Direct
Verfügbare Menge. : 3,691
Einzelpreis. : $1.99000
Ersatztyp. : Direct