Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FDB6670AL
BESCHREIBUNG
MOSFET N-CH 30V 80A TO263AB
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 80A (Ta) 68W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
278

Technische Daten

Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2440 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-FDB6670AL-FSTR
FAIFSCFDB6670AL

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB6670AL

Dokumente und Medien

Datasheets
1(FDB6670AL)

Menge Preis

QUANTITÄT: 278
Einzelpreis: $1.08
Verpackung: Bulk
MinMultiplikator: 278

Stellvertreter

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