Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP65R041CFD7XKSA1
BESCHREIBUNG
650V FET COOLMOS TO247
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
IPP65R041CFD7XKSA1 Models
STANDARDPAKET
50

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ CFD7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP65R041

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IPP65R041CFD7XKSA1
448-IPP65R041CFD7XKSA1
SP005413358

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP65R041CFD7XKSA1

Dokumente und Medien

Datasheets
1(IPP65R041CFD7)
Environmental Information
1(RoHS Certificate)
Featured Product
1(650 V CoolMOS™ CFD7 Superjunction MOSFETs)
EDA Models
1(IPP65R041CFD7XKSA1 Models)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $5.61885
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $6.24316
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $7.0756
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 50
Einzelpreis: $7.908
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $9.91
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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