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ChinaFDPF18N20FT-G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDPF18N20FT-G
BESCHREIBUNG
MOSFET N-CH 200V 18A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 18A (Tc) 35W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
392
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UniFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
140mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSFSCFDPF18N20FT-G
2156-FDPF18N20FT-G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDPF18N20FT-G
Dokumente und Medien
Datasheets
1(FDPF18N20FT-G Datasheet)
Menge Preis
QUANTITÄT: 392
Einzelpreis: $0.77
Verpackung: Bulk
MinMultiplikator: 392
Verpackung: Bulk
MinMultiplikator: 392
Stellvertreter
-