Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTH4L040N120SC1
BESCHREIBUNG
SICFET N-CH 1200V 58A TO247-4
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L
HERSTELLER
onsemi
STANDARD LEADTIME
6 Weeks
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
onsemi
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1762 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
319W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NTH4L040

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

488-NTH4L040N120SC1
2156-NTH4L040N120SC1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTH4L040N120SC1

Dokumente und Medien

Datasheets
1(NTH4L040N120SC1)
Environmental Information
()
PCN Design/Specification
1(Dimension/Color Change 24/Feb/2021)
PCN Packaging
1(Packing quantity increase 28/Dec/2020)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $13.30796
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $15.59525
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $16.635
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $20.07
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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