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ChinaFQAF33N10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQAF33N10
BESCHREIBUNG
MOSFET N-CH 100V 25.8A TO3PF
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
386
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
25.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
52mOhm @ 12.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQAF33N10-FS
FAIFSCFQAF33N10
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQAF33N10
Dokumente und Medien
Datasheets
1(FQAF33N10)
Menge Preis
QUANTITÄT: 386
Einzelpreis: $0.78
Verpackung: Tube
MinMultiplikator: 386
Verpackung: Tube
MinMultiplikator: 386
Stellvertreter
-