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ChinaFQU4N50TU-WS
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQU4N50TU-WS
BESCHREIBUNG
MOSFET N-CH 500V 2.6A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
70
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
FQU4N50
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FQU4N50TU-WS-ND
FQU4N50TU_WS-ND
FQU4N50TU_WS
FQU4N50TU-WSOS
2156-FQU4N50TU-WS-OS
ONSONSFQU4N50TU-WS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU4N50TU-WS
Dokumente und Medien
Datasheets
1(FQU4N50TU_WS)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
()
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
Menge Preis
-
Stellvertreter
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