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TEILNUMMER DES HERSTELLERS
2SA1013-O,T6MIBF(J
BESCHREIBUNG
TRANS PNP 160V 1A TO92L
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 160 V 1 A 50MHz 900 mW Through Hole TO-92L
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 200mA, 5V
Power - Max
900 mW
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92L
Base Product Number
2SA1013
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2SA1013-OT6MIBF(J
2SA1013OT6MIBFJ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J
Dokumente und Medien
Datasheets
1(2SA1013)
HTML Datasheet
1(2SA1013)
Menge Preis
-
Stellvertreter
Teil Nr. : KSA1013YBU
Hersteller. : onsemi
Verfügbare Menge. : 2,882
Einzelpreis. : $0.48000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 2,882
Einzelpreis. : $0.48000
Ersatztyp. : Parametric Equivalent