Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TK39A60W,S4VX
BESCHREIBUNG
MOSFET N-CH 600V 38.8A TO220SIS
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
32 Weeks
EDACAD-MODELL
TK39A60W,S4VX Models
STANDARDPAKET
50

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK39A60

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

TK39A60WS4VX
TK39A60W,S4VX(M

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK39A60W,S4VX

Dokumente und Medien

Datasheets
1(TK39A60W)
Featured Product
1(Server Solutions)
EDA Models
1(TK39A60W,S4VX Models)

Menge Preis

QUANTITÄT: 2000
Einzelpreis: $4.98284
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1000
Einzelpreis: $5.31765
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $5.9085
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $6.6963
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $8.036
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $9.37
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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