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ChinaMJE18206
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJE18206
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 600 V 8 A 13MHz 100 W Through Hole TO-220AB
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,110
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 600mA, 3A
Current - Collector Cutoff (Max)
200µA
DC Current Gain (hFE) (Min) @ Ic, Vce
18 @ 1A, 5V
Power - Max
100 W
Frequency - Transition
13MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSMJE18206
2156-MJE18206
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJE18206
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1110
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1110
Verpackung: Bulk
MinMultiplikator: 1110
Stellvertreter
-