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TEILNUMMER DES HERSTELLERS
2N7000BU_T
BESCHREIBUNG
MOSFET N-CH 60V 200MA TO92-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Base Product Number
2N7000
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2N7000BU_T
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 10/Mar/2017)
Menge Preis
-
Stellvertreter
Teil Nr. : 2N7000-G
Hersteller. : Microchip Technology
Verfügbare Menge. : 3,000
Einzelpreis. : $0.50000
Ersatztyp. : Direct
Verfügbare Menge. : 3,000
Einzelpreis. : $0.50000
Ersatztyp. : Direct