Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
2SK4151TZ-E
BESCHREIBUNG
MOSFET N-CH 150V 1A TO92
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 1A (Ta) 750mW (Ta) Through Hole TO-92
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
2SK4151TZ-E Models
STANDARDPAKET

Technische Daten

Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V
Rds On (Max) @ Id, Vgs
1.95Ohm @ 500mA, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 4 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
98 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SK4151TZ-E

Dokumente und Medien

Datasheets
1(2SK4151)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(2SK4151TZ-E Models)

Menge Preis

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Stellvertreter

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