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ChinaBUK7E1R6-30E,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK7E1R6-30E,127
BESCHREIBUNG
MOSFET N-CH 30V 120A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 120A (Tc) 349W (Tc) Through Hole I2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11960 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
BUK7
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
934066509127
BUK7E1R630E127
NEXNXPBUK7E1R6-30E,127
2156-BUK7E1R6-30E127-NX
568-9848-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK7E1R6-30E,127
Dokumente und Medien
Datasheets
1(BUK7E1R6-30E)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BUK7E1R6-30E)
Menge Preis
-
Stellvertreter
-