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TEILNUMMER DES HERSTELLERS
IPI100N04S4H2AKSA1
BESCHREIBUNG
MOSFET N-CH 40V 100A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 100A (Tc) 115W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI100N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI100N04S4-H2-ND
IPI100N04S4-H2
SP000711282
2156-IPI100N04S4H2AKSA1-IT
INFINFIPI100N04S4H2AKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI100N04S4H2AKSA1
Dokumente und Medien
Datasheets
1(IPx100N04S4-H2)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx100N04S4-H2)
Menge Preis
-
Stellvertreter
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