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TEILNUMMER DES HERSTELLERS
CE2A3Q-T-AZ
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60 V 2 A 1 W Through Hole
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
560
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
1 W
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
-
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-CE2A3Q-T-AZ
RENRNSCE2A3Q-T-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation CE2A3Q-T-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 560
Einzelpreis: $0.54
Verpackung: Bulk
MinMultiplikator: 560
Verpackung: Bulk
MinMultiplikator: 560
Stellvertreter
-