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ChinaEPC2103ENGRT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
EPC2103ENGRT
BESCHREIBUNG
GANFET 2N-CH 80V 23A DIE
DETAILIERTE BESCHREIBUNG
Mosfet Array 80V 23A Surface Mount Die
HERSTELLER
EPC
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
23A
Rds On (Max) @ Id, Vgs
5.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
7600pF @ 40V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC210
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
917-EPC2103ENGRT
917-1146-1
917-1146-2
917-1146-6-ND
917-EPC2103ENGRDKR
917-1146-2-ND
917-1146-1-ND
917-1146-6
917-EPC2103ENGRTR
917-EPC2103ENGRCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/EPC EPC2103ENGRT
Dokumente und Medien
Datasheets
1(EPC2103)
Product Training Modules
1(eGaN Integrated GaN Power)
Video File
()
Environmental Information
()
Reference Design Library
1(EPC9039: 17A Half H-bridge, 0 ~ 80V)
HTML Datasheet
1(EPC2103)
Menge Preis
-
Stellvertreter
-